TK7R4A10PL,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
$1.47
Available to order
Reference Price (USD)
1+
$1.47000
500+
$1.4553
1000+
$1.4406
1500+
$1.4259
2000+
$1.4112
2500+
$1.3965
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TK7R4A10PL,S4X from Toshiba Semiconductor and Storage redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the TK7R4A10PL,S4X offers the precision and reliability you need. Trust Toshiba Semiconductor and Storage to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
Torex Semiconductor Ltd
XP261N70023R-G
Nexperia USA Inc.
PSMN2R2-25YLC,115
onsemi
FDP5800
onsemi
NTD3813N-35G
onsemi
FDMS8050ET30
onsemi
NVMFS5C645NLWFAFT3G
Infineon Technologies
IPSA70R1K4CEAKMA1
Fairchild Semiconductor
FQPF33N10L
onsemi
2SK4101FS
Infineon Technologies