IQE065N10NM5CGATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TTFN-9
$3.35
Available to order
Reference Price (USD)
1+
$3.35000
500+
$3.3165
1000+
$3.283
1500+
$3.2495
2000+
$3.216
2500+
$3.1825
Exquisite packaging
Discount
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Enhance your electronic projects with the IQE065N10NM5CGATMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IQE065N10NM5CGATMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 48µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PG-TTFN-9-1
- Package / Case: 8-PowerTDFN
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