IRF100P218XKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 209A TO247AC
$0.00
Available to order
Reference Price (USD)
1+
$9.20000
10+
$8.34200
400+
$6.44780
800+
$5.51819
1,200+
$5.24275
Exquisite packaging
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Optimize your power electronics with the IRF100P218XKMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IRF100P218XKMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 278µA
- Gate Charge (Qg) (Max) @ Vgs: 555 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 556W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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