IRF200B211
Infineon Technologies
Infineon Technologies
MOSFET N-CH 200V 12A TO220AB
$1.25
Available to order
Reference Price (USD)
1+
$1.16000
10+
$1.02300
100+
$0.80850
500+
$0.62700
1,000+
$0.49500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRF200B211 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id: 4.9V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SIR150DP-T1-RE3
Renesas Electronics America Inc
RJK6013DPP-00#T2
Fairchild Semiconductor
HUF75617D3
onsemi
NTTFS4C50NTAG
Infineon Technologies
IPP65R600E6XKSA1
Nexperia USA Inc.
PMPB10XNEZ
Diodes Incorporated
DMP2035UVTQ-7
Panjit International Inc.
PJL9458AL_R2_00001
Infineon Technologies
IPB80N06S407ATMA2
STMicroelectronics