IRF3710LPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 57A TO262
$0.00
Available to order
Reference Price (USD)
1,000+
$1.12455
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IRF3710LPBF by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRF3710LPBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
onsemi
NVD6820NLT4G-VF01
Toshiba Semiconductor and Storage
TPCA8047-H(T2L1,VM
Renesas Electronics America Inc
2SK2415-ZK-E1-AZ
Texas Instruments
CSD16325Q5C
IXYS
IXFR80N10Q
Infineon Technologies
AUIRF7484Q
Sanken
FKP280A
IXYS
IXTP182N055T
onsemi
NVMFS6B14NT1G
IXYS