IRF540NLPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 33A TO262
$1.04
Available to order
Reference Price (USD)
1+
$1.65000
10+
$1.46200
100+
$1.15560
500+
$0.89620
1,000+
$0.70752
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRF540NLPBF by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Fairchild Semiconductor
FDB8444TS
Fairchild Semiconductor
HUFA75852G3-F085
Diodes Incorporated
DMP3026SFDE-7
Diodes Incorporated
ZXMP10A17KTC
Texas Instruments
CSD18532NQ5BT
Toshiba Semiconductor and Storage
SSM6K781G,LF
Diodes Incorporated
ZVNL120GTA
onsemi
2SJ654
onsemi
NTAT6H406NT4G
onsemi