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IRF6608TR1

Infineon Technologies
IRF6608TR1 Preview
Infineon Technologies
MOSFET N-CH 30V 13A DIRECTFET
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ ST
  • Package / Case: DirectFET™ Isometric ST

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