IRF6612TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 24A DIRECTFET
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRF6612TRPBF from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IRF6612TRPBF for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 136A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET™ MX
- Package / Case: DirectFET™ Isometric MX
Related Products
Infineon Technologies
IRF6727MTR1PBF
Vishay Siliconix
IRFR9010TRR
Infineon Technologies
IRFB17N20D
Vishay Siliconix
IRFR310TR
Toshiba Semiconductor and Storage
SSM3K7002BS,LF
IXYS
IXFT6N100Q
IXYS
IXFH36N55Q
onsemi
NTD4804NAT4G
Nexperia USA Inc.
2N7002BKMB,315
Alpha & Omega Semiconductor Inc.