IRF6618TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 30A DIRECTFET
$3.05
Available to order
Reference Price (USD)
4,800+
$0.97526
9,600+
$0.95480
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRF6618TRPBF from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IRF6618TRPBF offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET™ MT
- Package / Case: DirectFET™ Isometric MT
Related Products
Infineon Technologies
IPB042N10N3GATMA1
Infineon Technologies
IPL60R125P7AUMA1
Alpha & Omega Semiconductor Inc.
AOT12N50
onsemi
NVB190N65S3F
Toshiba Semiconductor and Storage
SSM3J36FS,LF
Rectron USA
RM2P60S2
NXP USA Inc.
PHT11N06LT,135
Taiwan Semiconductor Corporation
TSM60NB260CI C0G
Infineon Technologies
IRF7470TRPBF
Vishay Siliconix