IRF6668TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 55A DIRECTFET MZ
$2.32
Available to order
Reference Price (USD)
4,800+
$0.73931
9,600+
$0.72380
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IRF6668TRPBF single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IRF6668TRPBF for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET™ MZ
- Package / Case: DirectFET™ Isometric MZ
Related Products
STMicroelectronics
STB32N65M5
Vishay Siliconix
IRFBC40STRLPBF
Rectron USA
RM50N30DN
Infineon Technologies
IPB60R090CFD7ATMA1
Diodes Incorporated
DMTH43M8LK3-13
STMicroelectronics
STV270N4F3
onsemi
NTD4860NT4G
Vishay Siliconix
SI4463BDY-T1-E3
Diodes Incorporated
DMTH10H010SCT
onsemi