IRF7842TRPBF
Infineon Technologies
         
                
                                Infineon Technologies                            
                        
                                MOSFET N-CH 40V 18A 8SO                            
                        $2.06
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $2.06000
                                        500+
                                            $2.0394
                                        1000+
                                            $2.0188
                                        1500+
                                            $1.9982
                                        2000+
                                            $1.9776
                                        2500+
                                            $1.957
                                        Exquisite packaging
                            Discount
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                    The IRF7842TRPBF from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IRF7842TRPBF for their critical applications.                
            Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)

 
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                    