PSMN4R2-60PLQ
Nexperia USA Inc.
         
                
                                Nexperia USA Inc.                            
                        
                                MOSFET N-CH 60V 130A TO220AB                            
                        $3.21
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $2.40000
                                        50+
                                            $1.93460
                                        100+
                                            $1.74120
                                        500+
                                            $1.35424
                                        1,000+
                                            $1.12208
                                        Exquisite packaging
                            Discount
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                    The PSMN4R2-60PLQ by Nexperia USA Inc. is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the PSMN4R2-60PLQ is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.                
            Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8533 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 263W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3

 
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                    