IRF9Z24SPBF
Vishay Siliconix
         
                
                                Vishay Siliconix                            
                        
                                MOSFET P-CH 60V 11A D2PAK                            
                        $2.09
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $1.86000
                                        50+
                                            $1.51680
                                        100+
                                            $1.37040
                                        500+
                                            $1.07770
                                        1,000+
                                            $0.90208
                                        2,500+
                                            $0.84354
                                        5,000+
                                            $0.81427
                                        Exquisite packaging
                            Discount
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                    Upgrade your designs with the IRF9Z24SPBF by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IRF9Z24SPBF is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.                
            Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

 
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                    