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IRFD9010PBF

Vishay Siliconix
IRFD9010PBF Preview
Vishay Siliconix
MOSFET P-CH 50V 1.1A 4DIP
$1.45
Available to order
Reference Price (USD)
1+
$1.43000
10+
$1.26900
100+
$1.00310
500+
$0.77790
1,000+
$0.61413
2,500+
$0.57319
5,000+
$0.54453
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 580mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-HVMDIP
  • Package / Case: 4-DIP (0.300", 7.62mm)

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