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IRFHM8363TR2PBF

Infineon Technologies
IRFHM8363TR2PBF Preview
Infineon Technologies
MOSFET 2N-CH 30V 11A 8PQFN
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Specifications

  • Product Status: Obsolete
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A
  • Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
  • Power - Max: 2.7W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-PQFN-Dual (3.3x3.3)

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