IRFHM8363TRPBF
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 30V 11A 8PQFN
$1.26
Available to order
Reference Price (USD)
4,000+
$0.38500
Exquisite packaging
Discount
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Elevate your electronics with the IRFHM8363TRPBF from Infineon Technologies, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the IRFHM8363TRPBF provides the reliability and efficiency you need. Infineon Technologies's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Not For New Designs
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A
- Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
- Power - Max: 2.7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-PQFN (3.3x3.3), Power33
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