IRFI4110GPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 72A TO220AB FP
$4.57
Available to order
Reference Price (USD)
1+
$4.30000
10+
$3.86600
100+
$3.21520
500+
$2.65106
1,000+
$2.27495
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IRFI4110GPBF by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRFI4110GPBF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 43A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9540 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 61W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB Full-Pak
- Package / Case: TO-220-3 Full Pack
Related Products
Alpha & Omega Semiconductor Inc.
AON6226
Diodes Incorporated
ZVN4306A
Nexperia USA Inc.
BSH111BKR
onsemi
NTLJS4149PTAG
STMicroelectronics
STY50N105DK5
onsemi
FDS6681Z
Infineon Technologies
IRF4104SPBF
Rohm Semiconductor
RUL035N02FRATR
onsemi
FCP20N60
Infineon Technologies