IRFIB7N50APBF
Vishay Siliconix

Vishay Siliconix
MOSFET N-CH 500V 6.6A TO220-3
$3.29
Available to order
Reference Price (USD)
1+
$3.27000
10+
$2.96100
100+
$2.39760
500+
$1.88548
1,000+
$1.57821
3,000+
$1.47579
5,000+
$1.42458
Exquisite packaging
Discount
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Upgrade your designs with the IRFIB7N50APBF by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IRFIB7N50APBF is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 520mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab