NTHL060N090SC1
onsemi
onsemi
SICFET N-CH 900V 46A TO247-3
$11.66
Available to order
Reference Price (USD)
1+
$11.66000
500+
$11.5434
1000+
$11.4268
1500+
$11.3102
2000+
$11.1936
2500+
$11.077
Exquisite packaging
Discount
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Upgrade your designs with the NTHL060N090SC1 by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NTHL060N090SC1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 84mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 4.3V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 15 V
- Vgs (Max): +19V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 450 V
- FET Feature: -
- Power Dissipation (Max): 221W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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