IRFP254B
Fairchild Semiconductor
        
                
                                Fairchild Semiconductor                            
                        
                                N-CHANNEL  POWER MOSFET                            
                        $0.61
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $0.61000
                                        500+
                                            $0.6039
                                        1000+
                                            $0.5978
                                        1500+
                                            $0.5917
                                        2000+
                                            $0.5856
                                        2500+
                                            $0.5795
                                        Exquisite packaging
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                    Enhance your electronic projects with the IRFP254B single MOSFET from Fairchild Semiconductor. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Fairchild Semiconductor's IRFP254B for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.                
            Specifications
- Product Status: Active
 - FET Type: N-Channel
 - Technology: MOSFET (Metal Oxide)
 - Drain to Source Voltage (Vdss): 250 V
 - Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
 - Drive Voltage (Max Rds On, Min Rds On): 10V
 - Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V
 - Vgs(th) (Max) @ Id: 4V @ 250µA
 - Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
 - Vgs (Max): ±30V
 - Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
 - FET Feature: -
 - Power Dissipation (Max): 221W (Tc)
 - Operating Temperature: -55°C ~ 150°C (TJ)
 - Mounting Type: Through Hole
 - Supplier Device Package: TO-3P
 - Package / Case: TO-3P-3, SC-65-3
 
