SIHL630STRL-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 9A D2PAK
$0.79
Available to order
Reference Price (USD)
1+
$0.78584
500+
$0.7779816
1000+
$0.7701232
1500+
$0.7622648
2000+
$0.7544064
2500+
$0.746548
Exquisite packaging
Discount
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The SIHL630STRL-GE3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SIHL630STRL-GE3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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