IRFP4668PBF
Infineon Technologies

Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
$10.40
Available to order
Reference Price (USD)
1+
$8.12000
25+
$6.75440
100+
$6.14660
500+
$5.23494
1,000+
$4.62719
Exquisite packaging
Discount
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The IRFP4668PBF by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IRFP4668PBF is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3