IRFP4668PBFXKMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TO247-3
$10.40
Available to order
Reference Price (USD)
1+
$10.40000
500+
$10.296
1000+
$10.192
1500+
$10.088
2000+
$9.984
2500+
$9.88
Exquisite packaging
Discount
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Optimize your power electronics with the IRFP4668PBFXKMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IRFP4668PBFXKMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 520W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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