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IRFR9N20DTR

Infineon Technologies
IRFR9N20DTR Preview
Infineon Technologies
MOSFET N-CH 200V 9.4A DPAK
$0.00
Available to order
Reference Price (USD)
2,000+
$1.18800
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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