IRG4BC10SD-S
Infineon Technologies

Infineon Technologies
IGBT 600V 14A 38W D2PAK
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Reference Price (USD)
50+
$3.58160
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Enhance your electronic projects with the IRG4BC10SD-S Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IRG4BC10SD-S ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IRG4BC10SD-S for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 14 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
- Power - Max: 38 W
- Switching Energy: 310µJ (on), 3.28mJ (off)
- Input Type: Standard
- Gate Charge: 15 nC
- Td (on/off) @ 25°C: 76ns/815ns
- Test Condition: 480V, 8A, 100Ohm, 15V
- Reverse Recovery Time (trr): 28 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK