IRGS4640DPBF
Infineon Technologies
Infineon Technologies
DIODE 600V 40A D2PAK
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Upgrade your power management systems with the IRGS4640DPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IRGS4640DPBF provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IRGS4640DPBF for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 65 A
- Current - Collector Pulsed (Icm): 72 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
- Power - Max: 250 W
- Switching Energy: 115µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 75 nC
- Td (on/off) @ 25°C: 41ns/104ns
- Test Condition: 400V, 24A, 10Ohm, 15V
- Reverse Recovery Time (trr): 89 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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