IRG4PSH71UDPBF
Infineon Technologies
Infineon Technologies
IGBT 1200V 99A 350W SUPER247
$0.00
Available to order
Reference Price (USD)
1+
$14.64000
10+
$13.45700
100+
$11.36520
500+
$10.11016
1,000+
$9.29670
Exquisite packaging
Discount
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Optimize your power systems with the IRG4PSH71UDPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IRG4PSH71UDPBF delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 99 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A
- Power - Max: 350 W
- Switching Energy: 8.8mJ (on), 9.4mJ (off)
- Input Type: Standard
- Gate Charge: 380 nC
- Td (on/off) @ 25°C: 46ns/250ns
- Test Condition: 960V, 70A, 5Ohm, 15V
- Reverse Recovery Time (trr): 110 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-274AA
- Supplier Device Package: SUPER-247™ (TO-274AA)
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