IXST30N60BD1
IXYS
IXYS
IGBT 600V 55A 200W TO268
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Enhance your electronic projects with the IXST30N60BD1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXST30N60BD1 ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXST30N60BD1 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 110 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
- Power - Max: 200 W
- Switching Energy: 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: 30ns/150ns
- Test Condition: 480V, 30A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 50 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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