IRG4PSH71UPBF
Infineon Technologies
Infineon Technologies
IGBT 1200V 99A 350W SUPER247
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Upgrade your power management systems with the IRG4PSH71UPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IRG4PSH71UPBF provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IRG4PSH71UPBF for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 99 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A
- Power - Max: 350 W
- Switching Energy: 4.77mJ (on), 9.54mJ (off)
- Input Type: Standard
- Gate Charge: 370 nC
- Td (on/off) @ 25°C: 51ns/280ns
- Test Condition: 960V, 70A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-274AA
- Supplier Device Package: SUPER-247™ (TO-274AA)
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