IRGP50B60PDPBF-INF
Infineon Technologies
Infineon Technologies
AUTOMOTIVE WARP2 IGBT ULTRAFAST
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Upgrade your power management systems with the IRGP50B60PDPBF-INF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IRGP50B60PDPBF-INF provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IRGP50B60PDPBF-INF for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 33A
- Power - Max: 370 W
- Switching Energy: 360µJ (on), 380µJ (off)
- Input Type: Standard
- Gate Charge: 240 nC
- Td (on/off) @ 25°C: 34ns/130ns
- Test Condition: 390V, 33A, 3.3Ohm, 15V
- Reverse Recovery Time (trr): 50 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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