MWI75-06A7
IXYS
IXYS
IGBT MODULE 600V 90A 280W E2
$0.00
Available to order
Reference Price (USD)
6+
$66.60667
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with IXYS's MWI75-06A7, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The MWI75-06A7 is particularly effective in high-ambient-temperature environments like steel mill drives. IXYS brings decades of semiconductor expertise to every MWI75-06A7 module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 90 A
- Power - Max: 280 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
- Current - Collector Cutoff (Max): 1.3 mA
- Input Capacitance (Cies) @ Vce: 3.2 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
Related Products
Infineon Technologies
DDB2U30N08VRBOMA1307
Vishay General Semiconductor - Diodes Division
VS-20MT120UFP
IXYS
MII400-12E4
Infineon Technologies
HIGFED1BOSA1
Powerex Inc.
QIS4506001
Infineon Technologies
IRG5U400SD12B
IXYS
MIXA10WB1200TMH
IXYS
MIXA30W1200TML
Infineon Technologies
FZ1200R33KF2CNOSA2
Powerex Inc.