IRG7CH75K10EF-R
Infineon Technologies
Infineon Technologies
IGBT 1200V ULTRA FAST DIE
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The IRG7CH75K10EF-R by Infineon Technologies is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Infineon Technologies's reputation for quality, the IRG7CH75K10EF-R is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.53V @ 15V, 20A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 500 nC
- Td (on/off) @ 25°C: 120ns/445ns
- Test Condition: 600V, 100A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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