IRG7U100HF12B
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 200A POWIR 62
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The IRG7U100HF12B by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the IRG7U100HF12B in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every IRG7U100HF12B module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 580 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: POWIR® 62 Module
- Supplier Device Package: POWIR® 62
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