VS-GA200HS60S1
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 480A INT-A-PAK
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The VS-GA200HS60S1 from Vishay General Semiconductor - Diodes Division exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the VS-GA200HS60S1 in megawatt-level wind turbine converters. With Vishay General Semiconductor - Diodes Division's proven track record, the VS-GA200HS60S1 represents the future of power semiconductor modules.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 480 A
- Power - Max: 830 W
- Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 32.5 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-Pak
- Supplier Device Package: INT-A-PAK
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