IRG8P08N120KD-EPBF
Infineon Technologies
Infineon Technologies
IGBT 1200V 15A TO247AD
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Optimize your power systems with the IRG8P08N120KD-EPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IRG8P08N120KD-EPBF delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 15 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
- Power - Max: 89 W
- Switching Energy: 300µJ (on), 300µJ (off)
- Input Type: Standard
- Gate Charge: 45 nC
- Td (on/off) @ 25°C: 20ns/160ns
- Test Condition: 600V, 5A, 47Ohm, 15V
- Reverse Recovery Time (trr): 50 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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