IRG4PF50WDPBF
Infineon Technologies
Infineon Technologies
IGBT 900V 51A 200W TO247AC
$0.00
Available to order
Reference Price (USD)
1+
$8.88000
25+
$7.65000
100+
$6.64240
500+
$5.78414
1,000+
$5.03780
Exquisite packaging
Discount
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Upgrade your power management systems with the IRG4PF50WDPBF Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IRG4PF50WDPBF provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IRG4PF50WDPBF for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 900 V
- Current - Collector (Ic) (Max): 51 A
- Current - Collector Pulsed (Icm): 204 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
- Power - Max: 200 W
- Switching Energy: 2.63mJ (on), 1.34mJ (off)
- Input Type: Standard
- Gate Charge: 160 nC
- Td (on/off) @ 25°C: 71ns/150ns
- Test Condition: 720V, 28A, 5Ohm, 15V
- Reverse Recovery Time (trr): 90 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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