IRGB30B60K
Infineon Technologies

Infineon Technologies
IGBT 600V 78A 370W TO220AB
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The IRGB30B60K Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IRGB30B60K ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IRGB30B60K into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 78 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
- Power - Max: 370 W
- Switching Energy: 350µJ (on), 825µJ (off)
- Input Type: Standard
- Gate Charge: 102 nC
- Td (on/off) @ 25°C: 46ns/185ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB