IRGS10B60KDTRRP
Infineon Technologies
Infineon Technologies
IGBT 600V 22A 156W D2PAK
$0.00
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Reference Price (USD)
800+
$2.00044
Exquisite packaging
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Upgrade your power management systems with the IRGS10B60KDTRRP Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IRGS10B60KDTRRP provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IRGS10B60KDTRRP for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 22 A
- Current - Collector Pulsed (Icm): 44 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
- Power - Max: 156 W
- Switching Energy: 140µJ (on), 250µJ (off)
- Input Type: Standard
- Gate Charge: 38 nC
- Td (on/off) @ 25°C: 30ns/230ns
- Test Condition: 400V, 10A, 47Ohm, 15V
- Reverse Recovery Time (trr): 90 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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