STGW60H65DF
STMicroelectronics
STMicroelectronics
IGBT 650V 120A 360W TO247
$0.00
Available to order
Reference Price (USD)
1+
$9.42000
30+
$8.11500
120+
$7.04617
510+
$6.13567
1,020+
$5.34397
Exquisite packaging
Discount
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Upgrade your power management systems with the STGW60H65DF Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the STGW60H65DF provides reliable and efficient operation. STMicroelectronics's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose STGW60H65DF for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
- Power - Max: 360 W
- Switching Energy: 1.5mJ (on), 1.1mJ (off)
- Input Type: Standard
- Gate Charge: 206 nC
- Td (on/off) @ 25°C: 67ns/165ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): 62 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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