IRL510PBF-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 5.6A TO220AB
$1.41
Available to order
Reference Price (USD)
1+
$1.41000
500+
$1.3959
1000+
$1.3818
1500+
$1.3677
2000+
$1.3536
2500+
$1.3395
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IRL510PBF-BE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IRL510PBF-BE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
onsemi
EFC4615R-TR
STMicroelectronics
STB33N60M6
Vishay Siliconix
SQJ403EP-T1_GE3
Vishay Siliconix
SIA436DJ-T4-GE3
UnitedSiC
UJ3C120040K3S
Diodes Incorporated
DMT3020LFDFQ-7
Infineon Technologies
IAUC100N10S5L054ATMA1
Diodes Incorporated
DMP3007SCG-7
Harris Corporation
RFB18N10CS
Vishay Siliconix