RFB18N10CS
Harris Corporation
Harris Corporation
MOSFET N-CH 100V 18A TO220AB-5
$2.30
Available to order
Reference Price (USD)
1+
$2.30000
500+
$2.277
1000+
$2.254
1500+
$2.231
2000+
$2.208
2500+
$2.185
Exquisite packaging
Discount
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The RFB18N10CS from Harris Corporation redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the RFB18N10CS offers the precision and reliability you need. Trust Harris Corporation to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: Current Sensing
- Power Dissipation (Max): 79W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB-5
- Package / Case: TO-220-5
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