IRLU110ATU
onsemi
onsemi
MOSFET N-CH 100V 4.7A I-PAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRLU110ATU from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's IRLU110ATU for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 440mOhm @ 2.35A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 22W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Alpha & Omega Semiconductor Inc.
AOD3C50
Vishay Siliconix
SIR482DP-T1-GE3
onsemi
FQD14N15TM
Infineon Technologies
SPI20N60CFDHKSA1
IXYS
IXFH6N100Q
Nexperia USA Inc.
BUK7109-75AIE,118
onsemi
FQB4N90TM
Infineon Technologies
SI4435DYPBF
Microsemi Corporation
2N6784
IXYS