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SI4435DYPBF

Infineon Technologies
SI4435DYPBF Preview
Infineon Technologies
MOSFET P-CH 30V 8A 8SO
$0.00
Available to order
Reference Price (USD)
1+
$0.93000
10+
$0.82200
100+
$0.63000
500+
$0.49800
1,000+
$0.39840
Exquisite packaging
Discount
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Specifications

  • Product Status: Discontinued at Digi-Key
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

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