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IRLU120PBF

Vishay Siliconix
IRLU120PBF Preview
Vishay Siliconix
MOSFET N-CH 100V 7.7A TO251AA
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251AA
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

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