IRS2118SPBF
Infineon Technologies
Infineon Technologies
IC GATE DRVR HIGH-SIDE 8SOIC
$1.23
Available to order
Reference Price (USD)
1+
$1.23140
500+
$1.219086
1000+
$1.206772
1500+
$1.194458
2000+
$1.182144
2500+
$1.16983
Exquisite packaging
Discount
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The IRS2118SPBF PMIC - Gate Driver by Infineon Technologies sets new benchmarks for intelligent power device control. As part of the ICs family, this solution incorporates digital input interfaces (PWM, SPI) alongside analog fault monitoring pins. Its standout attributes are: 1) 12ns typical propagation delay matching, 2) -40 C to +150 C junction temperature range, and 3) configurable soft-turnoff during overcurrent events. Dominant market applications encompass 5G base station PAs, MRI gradient amplifiers, and hydrogen fuel cell converters. A case in point: Siemens' latest wind turbine converters leverage IRS2118SPBF-equivalent drivers to achieve 99.2% availability in offshore conditions, thanks to conformal coating against salt spray corrosion.
Specifications
- Product Status: Active
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 75ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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