ISC009N06LM5ATMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-TSON-8
$5.47
Available to order
Reference Price (USD)
1+
$5.47000
500+
$5.4153
1000+
$5.3606
1500+
$5.3059
2000+
$5.2512
2500+
$5.1965
Exquisite packaging
Discount
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The ISC009N06LM5ATMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the ISC009N06LM5ATMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 348A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 147µA
- Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSON-8-3
- Package / Case: 8-PowerTDFN
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