PMN30XPEAX
Nexperia USA Inc.
Nexperia USA Inc.
SMALL SIGNAL MOSFET FOR AUTOMOTI
$0.15
Available to order
Reference Price (USD)
1+
$0.14883
500+
$0.1473417
1000+
$0.1458534
1500+
$0.1443651
2000+
$0.1428768
2500+
$0.1413885
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the PMN30XPEAX single MOSFET from Nexperia USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Nexperia USA Inc.'s PMN30XPEAX for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
- Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 8V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta), 7.5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
Related Products
onsemi
NTLJS053N12MCLTAG
Diodes Incorporated
DMT8030LFDF-7
Vishay Siliconix
IRFR320PBF-BE3
Diodes Incorporated
DMT3004LPS-13
Diodes Incorporated
DMP1045UCB4-7
Goford Semiconductor
03N06
Renesas Electronics America Inc
UPA2702TP-E1-AZ
Diodes Incorporated
DMTH6002LPSWQ-13
onsemi
NTHL185N60S5H
onsemi