ISC011N03L5SATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 37A/100A TDSON
$1.67
Available to order
Reference Price (USD)
1+
$1.67000
500+
$1.6533
1000+
$1.6366
1500+
$1.6199
2000+
$1.6032
2500+
$1.5865
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ISC011N03L5SATMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the ISC011N03L5SATMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
Related Products
Infineon Technologies
IRFHM9331TRPBF
Texas Instruments
CSD17579Q5A
Vishay Siliconix
IRFP23N50LPBF
Diodes Incorporated
DMN10H100SK3-13
Infineon Technologies
IPD80R2K8CEATMA1
Vishay Siliconix
SQJ186EP-T1_GE3
Infineon Technologies
IRF1010ESTRLPBF
Infineon Technologies
IMBF170R450M1XTMA1
Microchip Technology
DN2535N3-G-P003
Vishay Siliconix