ISC0806NLSATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TDSON-8
$3.03
Available to order
Reference Price (USD)
1+
$3.03000
500+
$2.9997
1000+
$2.9694
1500+
$2.9391
2000+
$2.9088
2500+
$2.8785
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ISC0806NLSATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the ISC0806NLSATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 97A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 61µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
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