ISP12DP06NMXTSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 2.8A SOT223-4
$0.61
Available to order
Reference Price (USD)
1+
$0.61020
500+
$0.604098
1000+
$0.597996
1500+
$0.591894
2000+
$0.585792
2500+
$0.57969
Exquisite packaging
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The ISP12DP06NMXTSA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 520µA
- Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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Infineon Technologies